NUKLEONIKA 1992, 37(4):53-59

 


UNIFORM DISTRIBUTION OF HIGH ENERGY IONS IMPLANTED INTO GaAs



J. Krynicki1, J. Oleniak2, G. Iwosa2

1 Institute of Nuclear Chemistry and Technology, 03-195 Warsaw, Dorodna 16, Poland
2 Department of Chemical and Process Engineering, Warsaw Technical University, Warsaw, Poland

The conditions of implantations to obtain a uniform profile of the implanted ions into GaAs have been calculated. A special computer program has been elaborated.
The results of the calculation show the possibility of obtaining flat (with accuracy better than 5%) implanted ion distributions in a wide depth range. The energy-dose data are presented for various atoms implanted into GaAs. The validity of the obtained results is limited only by the availability of realistic data of Rp and DRp for high energy ion implantation.

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