| NUKLEONIKA 1994, 39(3):233-236
X-RAY INVESTIGATION OF POSTIMPLANTATION DEFECTS
IN SILICON CRYSTALS
D. Żymierska, J. Auleytner
Institute of Physics of the Polish Academy of Sciences,
Al. Lotników 32/46, 02-668 Warsaw, Poland
An attempt of explanation of origin of X-ray diffraction images of extended defects, arising from
irradiation of silicon single crystals by the medium dose Ar ions of energy 150 keV, is presented.
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