NUKLEONIKA 1997, 42(3):675-682

 


DAMAGE BUILDUP AND AMORPHIZATION IN ION - IMPLANTED GaAs1-xPx



S. Warchol1, J. Krynicki1, H. Rzewuski1, R. Groetzschel2

1 Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland
2 Forschungszentrum Rossendorf e. V., Postfach 510119 (40/2) 01314 Dresden, Germany

Post-implantation damage in GaAs1-xPx monocrystalline layers (x = 0, 0.15, 0.39, 0.65 and 1) implanted with 100 keV P+ ions and 150 keV As+ ions in the dose range 2 x 1013 - 12 x 1013 cm-2 and 1 x 1013 - 5 x 1013 cm-2, respectively at 120 and 300 K was investigated using RBS-c 1.7 MeV 4He+ technique. The critical damage dose (CDD) and the critical energy density (CED) versus the compound composition x were determined. It has been shown that GaAs1-xPx is more sensitive to amorphization for P+ ion implantation at both temperatures than GaAs and that the amorphization depends on the P atoms content in the compound.

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