| NUKLEONIKA 1999, 44(2):281-284
COMPARISON OF PERMITTIVITY OF ION IMPLANTED SILICON
AND SILICON BOMBARED WITH NEUTRONS
P. Żukowski, J. Partyka, P. Węgierek, M. Kozak
Lublin Technical University, Faculty of Electrical Engineering, 38A Nadbystrzycka Str.,
20-618 Lublin, Poland
The present work includes a comparison of permittivity variations in the silicon irradiated with neutrons and additionally implanted with ions, the changes occurring in the course of thermal annealing.
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