| NUKLEONIKA 1999, 44(2):285-288
CHANGES IN PERMITTIVITY OF SILICON IMPLANTED THROUGH
AN ALUMINUM LAYER
P. Żukowski, J. Partyka, P. Węgierek
Lublin Technical University, Faculty of Electrical Engineering,
38A Nadbystrzycka Str., 20-618 Lublin, Poland
The paper discusses the unit capacity changes in capacitors with a dielectric in a from of silicon implanted through an aluminum layer. The results of tests indicate that the course of Cu = f(Ta) is determined to a great extent by the processes in the implanted layer while the effect of the capacitor plates is insignificant.
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