| NUKLEONIKA 1999, 44(2):335-340
ION BEAM INDUCED LUMINESCENCE OF POROUS SILICON:
A COMPARATIVE STUDY
J. Żuk, R. Kuduk
Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1,
20-031 Lublin, Poland
Ion beam induced luminescence (ionoluminescence, IL) was studied in situ during 200 keV H+, He+, C+ and O+ ion beam impact on porous Si. Three bands at 1.9, 2.2 and 2.7 eV were observed in the IL spectra for all the ions. The red band at 1.9 eV is attributed to the near-edge recombination of electron-hole pairs confined in Si nanocrystallites of porous Si. The origin of two other bands is linked to the defect centers in SiO2 layers covering the complex structures of porous Si.
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