| NUKLEONIKA 1999, 44(2):363-367
SIMULATION OF THE PROCESS OF HIGH DOSE ION IMPLANTATION
IN SOLID TARGETS
A. F. Komarov1, F. F. Komarov1, P. Żukowski2, C. Karwat2, A. L. Shukan3
1 Institute of Applied Physics Problems, 7 Kurchatov Str., Minsk, 220064, Belorussia
2 Technical University of Lublin, Lublin, Poland
3 Belarussian State University, Minsk, Belorussia
The theoretical approach and physico-mathematical model for the process of the high dose ion implantation are developed. The model, involved, makes it possible to take into account a set of the following effects: scattering of the being implanted ions on the atoms introduced at the earlier stages; sputtering of the target surface by ion beams; as well as the target swelling with a valid account for influence of mobile boundary. The simulation of ion implantation processes into crystals was performed on the basis of Monte-Carlo method.
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