NUKLEONIKA 2008, 53(1):7-10

 


ION IMPLANTATION FOLLOWED BY LASER/PULSED PLASMA/ION BEAM ANNEALING: A NEW APPROACH TO FABRICATION OF SUPERCONDUCTING MgB2 THIN FILMS



Jerzy Piekoszewski1,2, Zbigniew Werner1,3, Marek Barlak1, Andreas Kolitsch4, Władysław Szymczyk1

1 Department of Material Studies, The Andrzej Sołtan Institute for Nuclear Studies,
05-400 Otwock/Świerk, Poland
2 Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-145 Warsaw, Poland
3 Institute of Physical Chemistry PAS, 44/52 Kasprzaka Str., 01-224 Warsaw, Poland
4 Forschungszentrum Rossendorf, P. O. Box 510119, 01314 Dresden, Germany

The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.

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