NUKLEONIKA 2008, 53(2):77-82

 


DAMAGE DISTRIBUTIONS IN GaAs SINGLE CRYSTAL IRRADIATED WITH 84Kr (394 MeV), 209Bi (710 MeV) AND 238U (1300 MeV) SWIFT IONS



Alexander Yu. Didyk1, Fadei F. Komarov2, Ludmila A. Vlasukova2, Evgenia A. Gracheva2, Andrzej Hofman1,3, Vera N. Yuvchenko2, Roland Wiśniewski3, Teresa Wilczyńska3

1 Flerov Laboratory of Nuclear Reaction, Joint Institute of Nuclear Research,
6 Joliot-Curie Str., 141980 Dubna, Russia
2 Belarusian State University, 4 Nezavisimosti Ave., 220030 Minsk, Belarus
3 Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm–2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.

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