| NUKLEONIKA 2009, 54(3):163-168
PECULIARITIES OF NEUTRON INTERACTION
WITH BORON CONTAINING SEMICONDUCTORS
Alexander Yu. Didyk1, Andrzej Hofman1,2, Witold Szteke2, Ewa Hajewska2,
Ludmila A. Vlasukova3
1 Joint Institute for Nuclear Research, FLNR, 6 Joliot-Curie Str., 141980 Dubna, Russia
2 Institute of Atomic Energy, 05-400 Otwock/Świerk, Poland
3 Belarusian State University, 4 Independence Ave., 220030 Minsk, Belarus
The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alpha particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En > 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.
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