| NUKLEONIKA 2011, 56(1):5-8
IMPLANTED MANGANESE REDISTRIBUTION IN Si AFTER He+ IRRADIATION AND HYDROGEN PULSE PLASMA TREATMENTZbigniew Werner1, Cezary Pochrybniak1, Marek Barlak1, Jerzy Piekoszewski1,2, Andrzej Korman1, Rene Heller3, Władysław Szymczyk1, Katarzyna Bocheńska1 1 The Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland 2 Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland 3 Forschungszentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden, Germany Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed. Close X |