NUKLEONIKA 1999 vol. 44 no. 2

• A. Turos, A. Stonert, B. Breeger, E. Wendler, W. Wesch
  Thermally activated defect transformations in III-V compound semiconductors
  pp 93-101
  
  
• J. Hereć, J. Filiks, J. Sielanko
  SIMS study of low energy implantation
  pp 103-110
  
  
• A. Droździel, K. Kornarzyński, J. Romanek, D. Mączka, A. Latuszyński
  Positive and negative ion production in the ion sputtering process
  pp 111-118
  
  
• J. Hereć, J. Filiks, M. Sowa, J. Sielanko, D. Mączka
  Negative ion source for SIMS application
  pp 119-128
  
  
• B. Jaroszewicz, D. Tomaszewski, W. Słysz, P. Grabiec, W. Jung
  Application of simulation tools for design of large area silicon photodetector technology
  pp 129-135
  
  
• K. Kiszczak
  Cold hollow cathode ion source
  pp 137-142
  
  
• P. Konarski
  Sample rotation applied in the SIMS depth profile analysis of layered structures
  pp 143-148
  
  
• A. Latuszyński, D. Mączka
  Atom ionization in the high-temperature cavity thermoionizer
  pp 149-154
  
  
• W. Słówko
  Three-dimensional surface imaging by the directional signal detection
  pp 155-160
  
  
• W. Drzazga, W. Słówko
  Electron optical properties of retarding lenses for the low voltage SEM
  pp 161-166
  
  
• M. Kulik, S. O. Saied, J. Liśkiewicz, D. Mączka
  Oxide layers on implanted GaAs surfaces: X-ray-photoelectron spectroscopy and ellipsometry study
  pp 167-173
  
  
• O. V. Milchanin, P. I. Gaiduk, F. F. Komarov
  Interaction between pre-existing dislocations in silicon and hydrogen-induced defects introduced by plasma treatment
  pp 175-179
  
  
• F. Nickel
  The energy loss of swift ions in solids
  pp 181-187
  
  
• P. I. Gaiduk, F. F. Komarov, V. S. Tishkov, O. Herre, E. Wendler, W. Wesch
  Wurtzite InP phase formation during swift Xe ion irradiation
  pp 189-193
  
  
• B. Kamieńska-Krzowska, P. Tarkowski
  Friction and wear processes modification of ion implanted steel
  pp 195-200
  
  
• F. F. Komarov, A. S. Kamyshan, A. M. Mironov
  Formation of horizontal and vertical insulation in semiconductors by ion implantation
  pp 201-206
  
  
• D. Krupa, J. Baszkiewicz, E. Jezierska, J. Kozubowski, A. Barcz
  Effect of nitrogen, carbon and oxygen ion implantation on the structure and corrosion resistance of OT-4-0 titanium alloy
  pp 207-216
  
  
• I. Mrochek, R. Guenzel, W. Matz, W. Moeller, V. Anishchik
  Implantation of boron ions into hard metals
  pp 217-223
  
  
• J. Narojczyk, J. Piekoszewski, E. Richter, Z. Werner
  Wear properties of TiN coated cutting tools implanted with nitrogen ions
  pp 225-230
  
  
• A. Olszyna, P. Pawłowski
  Oxygen-free AIN coatings produced from AIN(O) powder in the impulse nitrogen plasma
  pp 231-237
  
  
• J. Piekoszewski, Z. Werner, E. Wieser, et al.
  Formation of surface Pd-Ti alloys using the pulsed plasma beams
  pp 239-245
  
  
• P. Tarkowski, K. Łukasik, P. Budzyński, J. Liśkiewicz
  About possibility of improving durability of metal forming tools by ion implantation
  pp 247-251
  
  
• A. Werbowy, P. Pawłowski, J. Siwiec, J. Szmidt, A. Olszyna, A. Sokołowska
  AIN layers plasmochemically produced as semiconductors
  pp 253-260
  
  
• Z. Werner, J. Jagielski, J. Piekoszewski, L. Kubiak, R. Guenzel
  Improvement of the wear properties of cutting tools implanted with nitrogen ions
  pp 261-264
  
  
• J. Wilk, Z. W. Kowalski
  Ion-beam modification of stainless steel surface roughness
  pp 265-270
  
  
• B. Słowiński
  Deep ion implantation: advantages and current problems
  pp 271-275
  
  
• B. Słowinski, T. Wilczyńska, R. Wiśniewski
  Modification of temperature dependence of manganin resistance using the ion implantation techniques
  pp 277-280
  
  
• P. Żukowski, J. Partyka, P. Węgierek, M. Kozak
  Comparison of permittivity of ion implanted silicon and silicon bombared with neutrons
  pp 281-284
  
  
• P. Żukowski, J. Partyka, P. Węgierek
  Changes in permittivity of silicon implanted through an aluminum layer
  pp 285-288
  
  
• P. Żukowski, C. Karwat, M. Łozak, J. Liśkiewicz
  A new method for determining changes in hardness of implanted materials
  pp 289-292
  
  
• J. Dąbek, L. Michalak
  Study of CO₂ clusters by mass spectrometry
  pp 293-297
  
  
• K. Gront, T. Gwizdałła, J. Czerbniak
  Channelling of H⁰ projectile
  pp 299-307
  
  
• A. P. Kobzev
  Element depth profiling of implanted samples
  pp 309-315
  
  
• A. Pelc, L. Michalak
  Electron impact study of argon clusters
  pp 317-327
  
  
• J. Ruzicka, S. Saro, L. Krupa, et al.
  Some peculiarities of the Vavilov-Cherenkov radiation emitted by heavy ions
  pp 329-334
  
  
• J. Żuk, R. Kuduk
  Ion beam induced luminescence of porous silicon: a comparative study
  pp 335-340
  
  
• Z. Gacek, K. Maźniewski
  Similarity and differences of certain electrification processes in some fluids
  pp 341-347
  
  
• Z. Synowiec
  Electrical conductivity of implant isolation in GaAs
  pp 349-355
  
  
• K. Marszalek, E. Leja
  Industrial Arc based equipment for decorative coating deposition
  pp 357-361
  
  
• A. F. Komarov, F. F. Komarov, P. Żukowski, C. Karwat, A.L. Shukan
  Simulation of the process of high dose ion implantation in solid targets
  pp 363-367
  
  
• J. Martan
  Collision cascade as a fractal
  pp 369-374
  
  
• V. A. Belyi, F. F. Komarov
  Model of non-continuous track formation in InP under swift ion implantation
  pp 375-380
  
  
• W. Szyszko
  Laser induced diffusion in Ge/Sb - Si films
  pp 381-392